Photoconductivity in VO2–ZnO Inter-Nanowire Junction and Nanonetwork Device

We report electrical and optoelectrical properties of a cross-junction of two semiconducting nanowires. Semiconducting nanowires and their junction play an important role in nanonetwork device. By mechanically manipulating the nanowires, cross-junction nanodevices are fabricated on SiO2/Si substrate using VO2 and ZnO nanowires. These junctions are formed across prepatterned two-probe Au electrodes and contacted through Pt metal deposition. The cross-junction devices were studied using global and focused laser beam irradiation with a wavelength of 532 nm at sweeping bias and fixed external bias. Furthermore multi-junction in nanonetwork between VO2 and ZnO nanowires device is demonstrated as a viable photodetector for potential application.